Solid State physics Laboratory (DRDO) | India
Dr. Raghvendra Sahai Saxena is a distinguished scientist in the field of semiconductor devices and infrared detector technology. He has made remarkable contributions to the development of indigenous IR detectors for defense applications, achieving significant milestones in short-wave, mid-wave, and long-wave infrared bands. His work has enabled the demonstration of complete IR imaging and video systems based on technologies developed within India. Alongside his contributions to defense technology, he has also advanced research in power semiconductor devices, particularly trench gate power MOSFETs for energy-efficient applications. His career reflects a blend of technical expertise, impactful research, and national service.
Professional Profiles
Google Scholar | Scopus
Education
Dr. Saxena pursued his higher education in electronics and microelectronics at leading institutions in India. He acquired a strong foundation in engineering, which was further enhanced through advanced studies in microelectronics and semiconductor devices. His doctoral research focused on the design and development of advanced semiconductor technologies, combining theoretical knowledge with practical application. His academic journey has provided him with a comprehensive understanding of electronic circuits, semiconductor physics, device modeling, and fabrication techniques. This educational background laid the groundwork for his future innovations in IR detector technologies and power MOSFET design, enabling him to make significant scientific and technological contributions.
Professional Experience
Dr. Saxena has been serving as a senior scientist at the Solid State Physics Laboratory under the Defence Research and Development Organisation. His professional career has been dedicated to the design and development of advanced semiconductor devices, with a special focus on infrared detector technology for defense applications. He has successfully led and completed multiple projects on IR focal plane arrays, MEMS-based microbolometers, and CCD multiplexers. His leadership in collaborative programs with national research and industry partners has contributed to the growth of indigenous defense technology. In parallel, he has advanced power device design, strengthening India’s electronics research landscape.
Awards and Recognition
Dr. Saxena has received multiple awards recognizing his outstanding contributions to research and innovation. He has been honored with medals and technology group awards from premier defense organizations for his groundbreaking work in IR detector technology. His achievements have also been acknowledged through prestigious recognitions by scientific and professional bodies, reflecting the impact of his research on national security and technological advancement. His efforts in advancing indigenous capabilities have earned him appreciation from both scientific communities and defense establishments. These awards highlight his consistent dedication to excellence, innovation, and leadership in the field of semiconductor device development and applications.
Research Skills
Dr. Saxena possesses expertise in semiconductor device design, fabrication, and characterization. His core research skills lie in developing infrared detector arrays across short-wave, mid-wave, and long-wave bands, essential for advanced imaging technologies. He has demonstrated excellence in power MOSFET design, focusing on high-performance and energy-efficient devices for diverse applications. His work spans simulation, modeling, and practical prototyping, ensuring a holistic approach to research. He has published extensively in reputed journals and conferences, showcasing his technical depth. His collaborative research experience with laboratories and industries has further strengthened his ability to translate theoretical advancements into impactful technological solutions.
Notable Publications
Uncooled infrared microbolometer arrays and their characterisation techniques
Author: RK Bhan, RS Saxena, CR Jalwania, SK Lomash
Journal: Defence Science Journal 59 (6), 580-589
Year: 2009
Citations: 170
Nanotube tunneling FET with a core source for ultrasteep subthreshold swing: A simulation study
Author: G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar
Journal: IEEE Transactions on Electron Devices 66 (10), 4425-4432
Year: 2019
Citations: 74
Title: A new discrete circuit for readout of resistive sensor arrays
Author: RS Saxena, RK Bhan, A Aggrawal
Journal: Sensors and Actuators A: Physical 149 (1), 93-99
Year: 2009
Citations: 66
Virtual ground technique for crosstalk suppression in networked resistive sensors
Author: RS Saxena, RK Bhan, NK Saini, R Muralidharan
Journal: IEEE Sensors Journal 11 (2), 432-433
Year: 2010
Citations: 64
A line tunneling field-effect transistor based on misaligned core–shell gate architecture in emerging nanotube FETs
Author: G Musalgaonkar, S Sahay, RS Saxena, MJ Kumar
Journal: IEEE Transactions on Electron Devices 66 (6), 2809-2816
Year: 2019
Citations: 56
Conclusion
Dr. Saxena’s career exemplifies the integration of academic excellence, technological innovation, and national service. His contributions have advanced India’s capabilities in semiconductor device technologies, particularly in the defense domain. Through his leadership, multiple indigenous solutions in infrared imaging systems have been developed, directly strengthening strategic applications. His parallel work in power semiconductor devices further broadens his research footprint, impacting civilian and industrial applications. With numerous publications, editorial responsibilities, and collaborations, he continues to shape scientific progress in his field. Dr. Saxena stands as a role model for scientists aspiring to combine rigorous research with meaningful national contributions.