Kalyani Government Engineering College | India
Dr. Aritra Acharyya is a distinguished researcher in Electronics and Communication Engineering, recognized for impactful contributions to millimeter-wave and terahertz solid-state devices. He holds advanced degrees in Radio Physics and Electronics, with top academic rankings, followed by extensive experience as an Assistant Professor in government engineering institutions where he has led academic, research, and national-level satellite-based learning initiatives. His research specializes in IMPATT diodes, optical control of high-frequency semiconductor devices, graphene nanoribbon transport phenomena, RF and microwave engineering, UV sensor modeling, and applied signal and image processing. He has authored numerous research documents, accumulating an h-index of 9, over 350 citations, and more than 45 indexed publications, reflecting his steady contribution to high-impact scientific literature. Dr. Acharyya has coordinated multiple national programmes in collaboration with space and remote sensing agencies and completed a wide range of advanced faculty development programmes in microelectronics, antenna systems, GNSS, VLSI, AI, and quantum technologies. His achievements include prestigious academic and professional awards from leading scientific bodies, along with recognition for excellence in scholarly publications and technical education. His work continues to strengthen innovation in high-frequency semiconductor device engineering and inspire emerging researchers in advanced communication technologies.
Profile: Google Scholar | Orcid
Featured Publications
Acharyya, A., & Banerjee, J. P. (n.d.). Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Applied Nanoscience, 4(1), 1–14.
Acharyya, A., & Banerjee, J. P. (n.d.). Potentiality of IMPATT devices as terahertz source: An avalanche response time-based approach to determine the upper cut-off frequency limits. IETE Journal of Research, 59(2), 118–127.
Biswas, A., Sinha, S., Acharyya, A., Banerjee, A., Pal, S., Satoh, H., & Inokawa, H. (n.d.). 1.0 THz GaN IMPATT source: Effect of parasitic series resistance. Journal of Infrared, Millimeter, and Terahertz Waves, 39(10), 954–974.
Acharyya, A., Banerjee, S., & Banerjee, J. P. (n.d.). Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. Journal of Semiconductors, 34(2), 024001.
Acharyya, A., Banerjee, S., & Banerjee, J. P. (n.d.). Influence of skin effect on the series resistance of millimeter-wave IMPATT devices. Journal of Computational Electronics, 12(3), 511–525.